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| IPD30N06S3-24 OptiMOS(R)-T Power-Transistor Product Summary V DS R DS(on),max ID 55 24 30 V m A Features * N-channel - Normal Level - Enhancement mode * Automotive AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green package (RoHS compliant) * 100% Avalanche tested PG-TO252-3-11 Type IPD30N06S3-24 Package PG-TO252-3-11 Marking 3N0624 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 C, V GS=10 V T C=100 C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 C T C=25 C I D=15 A Value 30 23 120 100 30 20 45 -55 ... +175 55/175/56 mJ A V W C Unit A Rev. 1.1 page 1 2007-11-07 IPD30N06S3-24 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=20 A V DS=55 V, V GS=0 V, T j=25 C V DS=55 V, V GS=0 V, T j=125 C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=17 A 55 2.1 3.0 0.01 4.0 1 A V 3.3 62 40 K/W - 1 1 21 100 100 24 nA m Rev. 1.1 page 2 2007-11-07 IPD30N06S3-24 Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode2) Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 1) C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=30 A, R G=14.8 V GS=0 V, V DS=25 V, f =1 MHz - 1860 280 270 14 26 13 26 2140 420 400 - pF ns Q gs Q gd Qg V plateau V DD=11 V, I D=30 A, V GS=0 to 10 V - 15 6 27 7.4 20 9 31 - nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=30 A, T j=25 C V R=27.5 V, I F=I S, di F/dt =100 A/s - 0.9 38 30 30 120 1.3 - A V ns nC Current is limited by bondwire; with an R thJC = 3.3 K/W the chip is able to carry 33 A at 25C. For detailed information see Application Note ANPS071E 2) 3) 4) Defined by design. Not subject to production test. Qualified at -5V and +20V. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2007-11-07 IPD30N06S3-24 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V 50 35 30 40 25 30 P tot [W] 20 I D [A] 20 10 0 0 50 100 150 200 15 10 5 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 0.5 100 100 1 s 0.1 Z thJC [K/W] I D [A] 10 s 100 s 1 ms 0.05 10 -1 0.01 10 10-2 single pulse 1 0.1 1 10 100 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.1 page 4 2007-11-07 IPD30N06S3-24 5 Typ. output characteristics I D = f(V DS); T j = 25 C parameter: V GS 120 20 V 12 V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C parameter: V GS 75 6V 7V 8V 9V 100 10 V 65 80 55 I D [A] 9V 60 R DS(on) [m] 45 40 8V 35 7V 10 V 20 6V 5V 25 0 0 2 4 6 8 15 0 20 40 60 80 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 60 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 17 A; V GS = 10 V 45 50 40 40 -55 C 35 R DS(on) [m] 8 I D [A] 25 C 30 30 175 C 25 20 20 10 15 0 0 1 2 3 4 5 6 7 10 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.1 page 5 2007-11-07 IPD30N06S3-24 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 104 3.5 3 C [pF] 200A Ciss V GS(th) [V] 20A 2.5 103 Coss 2 Crss 1.5 1 -60 -20 20 60 100 140 180 102 0 5 10 15 20 25 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Typ. avalanche characteristics I A S= f(t AV) parameter: T j(start) 100 102 25C 100C I AV [A] I F [A] 10 150C 101 175 C 25 C 100 0 0.4 0.8 1.2 1.6 2 1 0.1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.1 page 6 2007-11-07 IPD30N06S3-24 13 Typical avalanche energy E AS = f(T j) parameter: I D 250 14 Typ. drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 66 64 200 7.5 A 62 60 V BR(DSS) [V] 150 58 56 54 52 E AS [mJ] 100 15 A 50 30 A 50 48 0 0 50 100 150 200 46 -60 -20 20 60 100 140 180 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 25 A pulsed parameter: V DD 12 16 Gate charge waveforms 11 V 44 V V GS Qg 10 8 V GS [V] 6 4 2 Q gs Q gd Q gate 0 0 10 20 30 40 50 Q gate [nC] Rev. 1.1 page 7 2007-11-07 IPD30N06S3-24 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2007 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2007-11-07 IPD30N06S3-24 Revision History Version Date Changes Removal of feature: ultra low 07.11.2007 Rdson Implementation of avalanche 07.11.2007 current single pulse Data Sheet version 1.1 Data Sheet version 1.1 Data Sheet version 1.1 07.11.2007 Update of package drawing Update of avalanche diagram 12 07.11.2007 and 13 implementation of footnote 2 for 07.11.2007 Eas specification Data Sheet version 1.1 Data Sheet version 1.1 Rev. 1.1 page 9 2007-11-07 |
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